Method of manufacturing silicon doped metal oxide layer using atomic layer deposition technique

摘要

It provides a silicon-doped metal oxide film-forming method using the atomic layer deposition technique. The methods comprises the step of repeating the steps, and a silicon-doped metal oxide film forming the metal oxide film-forming cycle to repeat K times Q cycle times. The K and Q are each an integer of not more than 1 10 or more. The metal oxide film-forming cycle, and injecting the metal raw material gas to the reactor, and a step of injecting an oxidizing gas. The metal oxide film-forming cycle, the silicon is doped, and injecting the metal source gas containing silicon into the reactor, and a step of injecting an oxidizing gas. At least one embodiment the step of repeating the steps, and the silicon-doped metal oxide film-forming cycle in which the metal oxide film formation cycle repeats K times Q times to form a silicon-doped metal oxide film having a desired thickness. In addition, silicon doped hafnium oxide film (HfO ₂ doped Si) forming method is also provided.