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DIELECTRIC FILM AND METHOD OF FORMING IT, SEMICONDUCTOR DEVICE, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
DIELECTRIC FILM AND METHOD OF FORMING IT, SEMICONDUCTOR DEVICE, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
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机译:介电膜及其形成方法,半导体器件,非易失性半导体存储器件以及半导体器件的生产方法
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摘要
In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound,layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas. IMAGE
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