APPARATUS FOR MEASURING OR ESTIMATING A VOLTAGE ON WAFER, AND SYSTEM FOR MONITORING A DC BIAS VOLTAGE ON A SUBSTRATE AND METHODE THEREOF

摘要

The present invention relates to a device for measuring the voltage of the wafer in the process chamber . The probe built into the process chamber wall is detected the voltage level generated by the plasma in the processing chamber . Therefore, the relationship between the detected plasma voltage level and the wafer voltage is determined.