METHOD FOR FOURIER ANALYSIS OF X-RAY REFLECTIVITY OF ULTRA THIN LAYER THICKNESS MEASUREMENT

摘要

The present invention relates to an X-ray reflectivity analysis method for measuring the thickness of the ultrathin film, incident on the sample X-ray intensity ratio of the reflected X-ray intensity with respect to the X-ray reflectivity (X-ray reflectivity, XRR) expressed as a function of the wave with the vector q, in the first step of measuring the XRR which has a cycle of oscillation (d is the thickness of the thin film), a measure of the measured XRR (R _mea ) and the weighting factor (R _ref ) and an adjustment for the second step, the attenuation of XRR for correcting the attenuation of XRR according to the roughness of the surface of the sample is multiplied by a, the wave The value of vector q is the value of the wave vector in view of the X-rays by changing the refractive index , by performing a Fourier transformation on the measured XRR through the calibration process includes a fourth step of measuring the thickness of the ultrathin film. Thus, there being a thickness of the interface layer between the high-k oxide film and the silicon substrate can be non-destructively measuring the development to be expected in line (in-line) analysis in semiconductor processing equipment. The present invention also can be developed to analyze how to analyze the thickness of the interface layer is inevitably generated in a high-k thin film manufacturing process is being developed as an alternative to prevent the degradation by decreasing the thickness of the oxide film in accordance with the degree of integration of semiconductor there.