Method and composition for polishing by CMP

摘要

The composition for polishing a semiconductor wafer of the present invention includes a chloride ion source in the dissolved state , which wafer is recessed to reduce the surface roughness of the copper interconnect (interconnect) that . While the copper interconnect above the peak (high point) is to be polished during the polishing process , a chlorine ion concentration of the electric field moves to the high viscosity . Chloride ions in the high viscosity prevents the coating material from the copper ions in solution over a high viscosity . Copper ion plating material is flat over the entire surface of the surface roughness of the interconnect interconnects decrease .