Detaching transfer film from semiconductor substrate and for its transfer by dry chemical etching, preferably by gas phase etching using specified doping

摘要

Detaching method for transfer film (20) from semiconductor substrate removes separating film under transfer film doped by specified dopant. For removal of separating film is used dry chemical etching, preferably by gas phase etching. Preferably dopant is applied to separating film by ion implantation. First doped separating film is deposited onto semiconductor substrate followed by transfer film, especially epitaxically. Independent claims are included for semiconductor device and transfer film.