METHOD FOR SELECTIVELY ETCHING A SEMICONDUCTOR REGION AND THE METHOD FOR SEPARATING A SEMICONDUCTOR DEVICE FROM A SUBSTRATE, CAPABLE OF TRANSFERRING A SEMICONDUCTOR STRUCTURE TO OTHER SUBSTRATE BY EASILY SEPARATING THE SEMICONDUCTOR STRUCTURE GROWN ON THE SUBSTRATE

摘要

PURPOSE: A method for selectively etching a semiconductor region and the method for separating a semiconductor device from a substrate are provided to discharge heat through a metal substrate by growing an optical element on a sapphire substrate and transferring the optical element to the metal substrate with high thermal conductivity.;CONSTITUTION: A n-GaN based first semiconductor region(120) and a n-GaN based second semiconductor region(240) are prepared on a substrate. An electrolyte etching process is performed using the first semiconductor region and the second semiconductor region as an anode and an electrolyte as a cathode. An etching speed is differently controlled by controlling the doping density on the first and second semiconductor regions.;COPYRIGHT KIPO 2010