Semiconductor device for e.g. distance radar sensor technology for road vehicles comprises semiconductor chip comprising low-frequency region embedded in plastic housing composition spaced apart from radio-frequency region by cavity

摘要

A semiconductor device for radio frequencies of more than 10 GHz comprises a semiconductor chip (4) which, on its active top side (5), comprises a radio-frequency region (6) and a low-frequency region (7) and/or a region which is supplied with a direct current (DC) voltage, where the low-frequency region and/or region supplied with DC voltage is embedded in a plastic housing composition (8) arranged such that the composition is spaced apart from the radio-frequency region by a cavity on the active top side of the semiconductor chip. An independent claim is also included for a method for producing a semiconductor device for radio frequencies of more than 10 GHz comprising (A) producing a semiconductor wafer having semiconductor chips arranged in rows and columns and having, on their active top sides, radio-frequency regions and low-frequency regions and/or regions supplied with DC voltage; (B) applying a wall structure (9) which surrounds the radio-frequency regions; (C) separating the semiconductor wafer into semiconductor chips; (D) applying individual semiconductor chips with a wall structure to a carrier having semiconductor device positions; (E) electrically connecting the semiconductor chips to a wiring structure of the carrier via connectors (18); (F) applying an adapted cover (10) to the wall structure; (G) packaging the semiconductor chips, connectors, wall structure, and at least parts of the cover and of the carrier in a plastic housing composition; and (H) separating the semiconductor device positions of the carrier into individual semiconductor devices.