首页> 外国专利> Electronic switch e.g. insulated gate bipolar transistor, switching method, involves increasing and/or decreasing potential of control terminal of switch up to target potential based on initial condition, and beyond target potential

Electronic switch e.g. insulated gate bipolar transistor, switching method, involves increasing and/or decreasing potential of control terminal of switch up to target potential based on initial condition, and beyond target potential

机译:电子开关例如绝缘栅双极型晶体管,一种开关方法,涉及增加和/或减小开关的控制端的电势,使其基于初始条件达到目标电势,并超过目标电势

摘要

The method involves continuously increasing and/or decreasing a potential of a control terminal (11g) of an electronic switch e.g. transistor (11) up to a target potential based on an initial condition. The potential of the terminal is continuously increased and/or decreased beyond the target potential. A derivative of a function of the potential of the terminal at the time up to achieving the target potential at an average of around factor 2 is larger than the derivative of the function after achieving the target potential. Independent claims are also included for the following: (1) a circuit arrangement for switching an electronic switch (2) a driver circuit with an electronic switch.
机译:该方法包括连续地增加和/或减小电子开关例如电子开关的控制端子(11g)的电势。晶体管(11)基于初始条件达到目标电位。终端的电势会不断增加和/或降低到目标电势之外。直到达到目标电位的平均时间约为2倍时,终端的电位函数的导数要大于达到目标电位后的函数的导数。还包括以下方面的独立权利要求:(1)用于切换电子开关的电路装置(2)具有电子开关的驱动器电路。

著录项

  • 公开/公告号DE102005059812A1

    专利类型

  • 公开/公告日2007-06-21

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20051059812

  • 发明设计人 HEBENSTREIT ANDREAS;

    申请日2005-12-14

  • 分类号H03K19/003;H03K17/16;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:36

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