METHOD FOR FORMING BISMUTH-LAYER-LIKE FERRODIELECTRIC FILM, SEMICONDUCTOR DEVICE HAVING THE BISMUTH-LAYER-LIKE FERRODIELECTRIC FILM, AND MANUFACTURING METHOD FOR THE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To selectively form a bismuth-layer-like ferrodielectric film on a lower electrode by avoiding an insulating film.;SOLUTION: A method for forming the bismuth-layer-like ferrodielectric film includes a step (a) of forming a polycrystalline conductive film 110 in an amorphous insulating film 181, formed on a board 100 so as to expose a part of the polycrystalline conductive film 110, and a step (b) of selectively forming the bismuth-layer-like ferrodielectric film 111 on the exposed portion of the polycrystalline conductive film 110. At the step (b), the formation of an oxide film, containing a constituent element of the bismuth-layer-like ferrodielectric film 111 on the amorphous insulating film 181, is prevented.;COPYRIGHT: (C)2008,JPO&INPIT