FERRODIELECTRIC CRYSTALLINE THIN FILM COATED SUBSTRATE, ITS MANUFACTURE AND FERRODIELECTRIC THIN FILM DEVICE USING THE SUBSTRATE

摘要

PURPOSE: To realize density and surface flatness of a film by forming an oxide ferrodielectric crystalline thin film consisting of Bi₄, Ti₃, O₁₂ on an electrode formed on a semiconductor single crystalline substrate with a buffer layer in between. ;CONSTITUTION: A heat oxide film 2 is formed on a surface of a semiconductor single crystalline wafer 1 by thermal oxidation, a Pt lower electrode 4 is formed thereon by sputtering with a Ti layer 3 in between and it is used as a substrate 10. A buffer layer 5 and a Bi₄Ti₃O₁₂ thin film 6 as a ferrodielectric crystalline thin film are formed on the substrate 10 by a sol-gel method. Thereby, a dense ferrodielectric crystalline thin film of a flat surface can be acquired.;COPYRIGHT: (C)1995,JPO