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ZnO VAPOR DEPOSITION MATERIAL AND ZnO FILM FORMED THEREFROM

机译:ZnO气相沉积材料和ZnO薄膜制备的

摘要

PROBLEM TO BE SOLVED: To provide a ZnO vapor deposition material to be used for forming a film having high electroconductivity close to that of an ITO film at a high speed.;SOLUTION: The ZnO vapor deposition material to be used for forming a transparent electroconductive film is formed of a pellet which contains ZnO as a main component, Y and one or more elements selected from the group consisting of B, Al, Ga and Sc. The content proportion of Y is higher than that of the one or more elements selected from the group consisting of B, Al, Ga and Sc. The content proportion of Y is in a range of 0.1 to 14.9 mass%, and the content proportion of the one or more elements selected from the group consisting of B, Al, Ga and Sc is in a range of 0.1 to 10 mass%.;COPYRIGHT: (C)2009,JPO&INPIT
机译:解决的问题:提供一种ZnO气相沉积材料,该材料用于高速形成具有高电导率的膜,该导电率接近于ITO膜的导电率;解决方案:该ZnO气相沉积材料,用于形成透明导电剂膜由包含ZnO作为主要成分,Y和选自B,Al,Ga和Sc的一种或多种元素的粒料形成。 Y的含量比例高于选自B,Al,Ga和Sc的一种或多种元素的含量比例。 Y的含量比例在0.1至14.9质量%的范围内,并且选自B,Al,Ga和Sc的一种或多种元素的含量比例在0.1至10质量%的范围内。 ;版权:(C)2009,日本特许厅&INPIT

著录项

  • 公开/公告号JP2008255477A

    专利类型

  • 公开/公告日2008-10-23

    原文格式PDF

  • 申请/专利权人 MITSUBISHI MATERIALS CORP;

    申请/专利号JP20080048900

  • 发明设计人 MAYUZUMI YOSHIYUKI;

    申请日2008-02-29

  • 分类号C23C14/24;C23C14/34;C04B35/453;H01B5/14;H01M14/00;

  • 国家 JP

  • 入库时间 2022-08-21 20:24:38

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