In situ chamber cleaning process to remove deposits of by-products from chemical vapor deposition etching chamber

摘要

A method and apparatus for cleaning a process chamber, comprising the steps of shutting off the cooling fluid flow to the channels in the support member in the processing chamber, it is about 0.1 inches long in the gas distribution plate supporting member The method and apparatus includes the steps of raising to the steps of heating the gas distribution plate, and introducing into the process chamber through the gas distribution plate heat transfer gas. In one embodiment, the chamber, and a support assembly adapted to the chamber body, to support a substrate thereon and is at least partially disposed within the chamber body. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly is adapted and a gas distribution assembly defining a plasma cavity and the top plate, between which, the gas distribution assembly is to heat the substrate. Remote plasma source having a U-shaped plasma region is connected to a gas distribution assembly. [Selection Figure] Figure 1A