INTEGRATED DRAM MEMORY CIRCUIT, ROW ADDRESS CIRCUIT, AND METHOD FOR GENERATING ROW ADDRESS BY REFRESHING ROW CONTROL CIRCUIT AND DRAM MEMORY

摘要

PROBLEM TO BE SOLVED: To overcomes a drawback of an integrated circuit memory where the enable of a row selection circuit is delayed until appropriate address source is determined.;SOLUTION: The circuit and method for the integrated circuit memory, at least one cycle before actual internal refresh operation is performed, a look-ahead function that provides a refresh command to a device is incorporated. An active cycle is executed at the same clock as a clock at which an external command is applied. The active command is not changed but executed in the same clock cycle as generation of the active command. The active command can be executed immediately without waiting for determination as to whether a line address latch should be supplied externally or internally.;COPYRIGHT: (C)2008,JPO&INPIT