INTEGRATED DRAM MEMORY CIRCUIT, ROW ADDRESS CIRCUIT, ROW CONTROL CIRCUIT, AND METHOD FOR REFRESHING ROW CONTROL CIRCUIT AND DRAM MEMORY AND GENERATING ROW ADDRESS

摘要

PROBLEM TO BE SOLVED: To overcome such defect that 'enable' of a row selection circuit is delayed until an appropriate address source is decided in a circuit and a method for an integrated circuit memory.;SOLUTION: In a circuit and a method for an integrated circuit memory, a look-ahead function giving a refresh command to a device is incorporated at least one cycle before actual internal refresh operation occurs. An active cycle is performed with the same clock as application of an outer command. An active command is not changed, is performed with the same clock cycle as generation of the active command. The active command can be performed directly without waiting for decision whether a row address latch is to be supplied at outside or inside.;COPYRIGHT: (C)2003,JPO