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The semiconductor luminous element and the electrode for the semiconductor luminous element, the production manner, the semiconductor substrate where the 1st electrode was formed to the illuminant null back which uses the LED

机译:半导体发光元件及半导体发光元件用电极,制造方式,在使用LED的照明光源背面形成有第一电极的半导体基板。

摘要

PROBLEM TO BE SOLVED: To substantially improve luminous efficiency in a semiconductor light- emitting device. ;SOLUTION: A semiconductor light-emitting device 10 is provided with a semiconductor substrate 1, where a first electrode 4 is formed on a backside, a semiconductor layer 3 including a luminous part 2 while the semiconductor layer 3 is formed on the semiconductor substrate 1, a distribution electrode 7 that is formed while being partially distributed to one portion of the surface of the semiconductor layer 3 and is in ohmic contact with the semiconductor layer 3, a transparent conductive film 4 that is formed, while covering the surface of the semiconductor layer 3 and a distribution electrode 7 and is continuous to the distribution electrode 7, and a pedestal electrode 6 that is formed at one portion of the surface of the transparent conductive film 4 and is continuous to the transparent conductive film 4.;COPYRIGHT: (C)2001,JPO
机译:要解决的问题:实质上提高半导体发光器件的发光效率。 ;解决方案:半导体发光器件10配备有半导体衬底1,在背面上形成有第一电极4,包括发光部分2的半导体层3,而在半导体衬底1上形成有半导体层3。在形成为在覆盖半导体表面的同时形成透明导电膜4的同时,透明电极4形成为部分地分布在半导体层3的表面的一部分上并且与半导体层3欧姆接触而形成。层3和分布电极7,并与分布电极7连续;基座电极6,其形成在透明导电膜4的表面的一部分上,并与透明导电膜4连续。 C)2001,日本特许厅

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