Production manner of III group nitride semiconductor luminous element, variation decrease manner of radiation wavelength being distributed III group nitride semiconductor luminous element and lamp and III group nitride semiconductor luminous element wafer

摘要

This invention the case where each stratum was formed on the substrate be able to suppress the curvature, be able to form the semiconductor formation which includes the luminous layer which is superior in crystal Characteristic, production manner of III group nitride semiconductor luminous element which is superior in luminous property, III group nitride semiconductor luminous element and the lamp are offered. Concretely as for production manner of III group nitride semiconductor luminous element of this invention, center, foundation formation and n die contact formation, the n die clad layer, being the luminous layer, the p die clad layer and production manner of III group nitride semiconductor luminous element which consecutively laminates p die contact formation on the principal plane of the substrate, diameter 4inch (100mm) to be above as an aforementioned substrate, curvature tonnage H at room temperature, with the curvature direction where the substrate destal part faces at least on aforementioned principal plane side, to prepare the substrate which makes the range of 0.1 - 30 millimicrons, on the aforementioned substrate aforementionedAfter forming center, in a state where aforementioned foundation formation and n die contact formation are formed with respect to the said center (0002) x-ray rocking curve half breadth of the surface below 100arcsec, at the same time, (10 - 10) x-ray rocking curve half breadth of the surface is below 300arcsec, furthermore, with respect to aforementioned n die contact formation, the aforementioned n die clad layer, the luminous layer, the p die clad layer and that p die contact formation is formed are featured.