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The Influence of the Configuration to the Performance of Thermoelectric Elements made by SiGe p-type and n-type semiconductors

机译：构造对SiGe p型和n型半导体制成的热电元件性能的影响

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摘要

The simulation model of the two types of thermoelectric elements is made by using Finite Difference Method. The simulated results are compared to the experimental data. In spite of the large resistance in the experimental data, calculated results are in agreement with experimental data. An optimum configuration of the thermoelectric element is obtained.

机译：通过使用有限差分法进行两种热电元件的仿真模型。将模拟结果与实验数据进行比较。尽管实验数据中的电阻大，但计算结果与实验数据一致。获得了热电元件的最佳配置。

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来源
《日本機械学会年次大会》|2003年||共2页
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作者
Tomoaki TSUJI; Naotake NODA;
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原文格式 PDF
正文语种
中图分类 TH-53;
关键词
Thermoelectric element; SiGe; FDM; Simulation; Optimum configuration;

机译：热电元件;SiGe;FDM;仿真;最佳配置;

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4. The Influence of the Configuration to the Performance of Thermoelectric Elements made by SiGe p-type and n-type semiconductors [C] . Tomoaki TSUJI, Naotake NODA 日本機械学会年次大会 . 2003

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The Influence of the Configuration to the Performance of Thermoelectric Elements made by SiGe p-type and n-type semiconductors

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