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首页> 外文期刊>Journal of Nuclear Materials: Materials Aspects of Fission and Fusion >Influence of fast neutron and gamma irradiation on the thermoelectric properties of n-type and p-type SiGe alloy
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Influence of fast neutron and gamma irradiation on the thermoelectric properties of n-type and p-type SiGe alloy

机译:快中子和γ辐射对n型和P型SiGe合金热电性能的影响

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The thermoelectric materials that work in radioisotope thermoelectric generators or space reactor power sources will be exposed to neutron irradiation and gamma irradiation for a long time. Herein, the influences of neutron irradiation doses between 10(13) n/cm(2) and 10(15) n/cm(2), and gamma irradiation of 10(4) Gy, on the transport properties of n- and p-type SiGe alloys were investigated. It was found that, neutron irradiation causes defects, and leads to a dramatic decrease in carrier mobility for both n- and p-type SiGe. As a result, the thermoelectric properties of both n- and p-type SiGe decline steeply after neutron irradiation. However, the thermoelectric properties of SiGe alloys can be restored by heat treatment at proper temperature. The n-type SiGe is more sensitive to neutron irradiation than p-type SiGe. After 10(15) n/cm(2) neutron irradiation, the electrical conductivity, power factor and ZT of n-type SiGe decrease to 0.014%, 5% and 3.8% that of an un-irradiated sample; while the electrical conductivity, power factor, and ZT of p-type SiGe decrease to 0.14%, 12% and 5.2% that of an un-irradiated sample. The healing temperature is 1273 K for n-type SiGe, while 623 K for p-type SiGe. Gamma irradiation has no obvious effect on the transport properties of SiGe alloys. (C) 2019 Published by Elsevier B.V.
机译:在放射性电视镜热电发电机或空间反应器电源中工作的热电材料将暴露于长时间的中子辐射和伽马辐射。在此,中子照射剂量在10(13)℃/ cm(2)和10(15)℃(2)之间的影响和10(4)Gy的γ辐射,在N-和P的运输性质上-Type SiGe合金被研究。结果发现,中子辐射导致缺陷,并导致N-和P型SiGe的载流子迁移率显着降低。结果,在中子辐射之后陡峭的N-和P型SiGe的热电性能下降。然而,可以通过适当温度的热处理恢复SiGe合金的热电性能。 N型SiGe对中子照射比p型SiGe更敏感。在10(15)n / cm(2)中子辐射后,N型SiGe的电导率,功率因数和Zt降低至未照射样品的0.014%,5%和3.8%;虽然P型SiGe的电导率,功率因数和Zt降低至未辐射样品的0.14%,12%和5.2%。 N型SiGe愈合温度为1273 k,而P型SiGe为623K。 γ辐射对SiGe合金的运输性能没有明显影响。 (c)2019年由elestvier b.v发布。

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