Method and apparatus for measuring the density of impurities and defects in the semiconductor wafer or /

摘要

To measure the density of defects and impurities in a semiconductor wafer and / or current to flow through the first value to the semiconductor wafer having a substrate of semiconductor material. Upon irradiation with light pulse on the semiconductor wafer, to increase the current to a value by a second electron-hole pairs generated in the semiconductor wafer in in response to the optical pulse. After the end of the irradiation of the light pulse, I will measure the rate of change toward the first value from the second value of the current. As a function of the rate of change, the density of impurities is measured and defects of the semiconductor wafer / or.