MOS TRANSISTOR, METHOD FOR MANUFACTURING THE MOS TRANSISTOR, CMOS SEMICONDUCTOR DEVICE INCLUDING THE MOS TRANSISTOR, AND SEMICONDUCTOR DEVICE INCLUDING THE CMOS SEMICONDUCTOR DEVICE

摘要

A MOS transistor includes a silicon substrate, a gate insulating film disposed on the silicon substrate, a gate electrode disposed on the gate insulating film, source/drain regions disposed at both sides of the gate electrode, and a stress-generating region containing a stress-generating substance. The stress-generating region is disposed within the silicon substrate away from a surface of the silicon substrate, between the source/drain regions, and under the gate electrode.