MOS TRANSISTOR, METHOD FOR MANUFACTURING THE SAME MOS TRANSISTOR, CMOS TYPE SEMICONDUCTOR DEVICE USING THE SAME MOS TRANSISTOR, AND SEMICONDUCTOR DEVICE USING THE SAME CMOS TYPE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an MOS transistor in which a stressor is arranged so that a stress to be generated by a stressor can be much more efficiently applied to the channel part of the MOS transistor and a method for manufacturing the MOS transistor and a CMOS type semiconductor device using the MOS transistor.;SOLUTION: The MOS transistor includes: a silicon substrate; a gate insulating film on the silicon substrate; a gate electrode on the gate insulating film; source/drain regions formed at the both sides of the gate electrode; a region isolated from the surface of the silicon substrate, and interposed between the source/drain regions, that is, a stress generation substrate embedded region formed in the silicon substrate at the lower part of the gate electrode, and embedded with stress generation substance. A method for manufacturing the MOS transistor and a CMOS type semiconductor device using the MOS transistor are provided.;COPYRIGHT: (C)2008,JPO&INPIT