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Two-step post nitridation annealing for lower EOT plasma nitrided gate dielectrics
Two-step post nitridation annealing for lower EOT plasma nitrided gate dielectrics
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机译:两步氮化后退火,用于降低EOT等离子体氮化栅极电介质
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摘要
A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed first in an inert or reducing ambient at a temperature ranging between about 700° C. and 1100° C. The silicon oxynitride film is annealed for the second time in an oxidizing ambient at a temperature ranging between about 900° C. and 1100° C.
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