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THERMAL NITRIDATION OF SILICON IN ACTIVE NITROGEN (THIN DIELECTRICS, PLASMA PROCESSING, VLSI MATERIALS, SILICON-NITRIDE, SILICON-OXYNITRIDE)

机译：活性氮中硅的热氮化（薄介电体，等离子体处理，超大型材料，氮化硅，氧化硅）

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作者
GIRIDHAR, R. V.;
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作者单位

Rensselaer Polytechnic Institute.;

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授予单位 Rensselaer Polytechnic Institute.;
学科
学位 Ph.D.
年度 1985
页码 236 p.
总页数 236
原文格式 PDF
正文语种 eng
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1. Effect of Incorporated Nitrogen on the Band Alignment of Ultrathin Silicon-oxynitride Films as a Function of the Plasma Nitridation Conditions [J] . Yim CJ, Ko DH, Park SH, Journal of the Korean Physical Society . 2011,第5期

机译：掺氮对超薄氮氧化硅薄膜能带取向的影响，随等离子体氮化条件的变化
2. Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials [J] . J.C. Tinoco, M. Estrada, H. Baez, Thin Solid Films . 2006,第2期

机译：室温等离子体氧化：制备超薄氧化硅和高介电常数材料的新工艺
3. FIRE RETARDANCY PERFORMANCE AND THERMAL STABILITY OF MATERIALS COATED BY ORGANOSILICON THIN FILMS USING A COLD REMOTE PLASMA PROCESS [J] . Jama C. Polymeric Materials: Science and Engineering . 2000,第Autumn期

机译：低温等离子体处理有机硅薄膜薄膜材料的防火性能和热稳定性
4. A New Low Thermal Budget Approach to Interface Nitridation for Ultra-Thin Silicon Dioxide Gate Dielectrics by OCmbined Plasma-Assisted and Rapid Thermal Processing [C] . H.Niimi, H.Y.Yang, G.Lucovsky . 1998

机译：OC-等离子体辅助快速热处理技术对超薄氧化硅栅介质进行界面氮化的低热预算新方法
5. Studies in remote plasma nitridation of silicon dioxide for metal-oxide-semiconductor gate dielectric applications. [D] . Eason, Kwame Nkrumah. 2000

机译：用于金属氧化物半导体栅极介电应用的二氧化硅远程等离子体氮化研究。
6. Effect of Material and Process Variables on Characteristics of Nitridation-Induced Self-Formed Aluminum Matrix Composites—Part 2: Effect of Nitrogen Flow Rates and Processing Temperatures [O] . Dae-Young Kim, Pil-Ryung Cha, Ho-Seok Nam, 2020

机译：材料和工艺变量对氮化诱导的自成型铝基复合材料特性的影响-第2部分：氮气流量和加工温度的影响
7. Effect of nitrogen gas pressure during heat treatment on the morphology of silicon nitride fibers synthesized by carbothermal nitridation [O] . Sotaro Baba, Tomoyo Goto, Sung Hun Cho, 2018

机译：热处理过程中氮气压力对碳热氮化合成的氮化硅纤维形态的影响
8. Dielectric Properties of Silicon Dioxide and Silicon-Oxynitride Sol/Gel Thin Films [R] . Carman, L. A., Pantano, C. G. 1986

机译：二氧化硅和硅氮氧化物溶胶/凝胶薄膜的介电性能

THERMAL NITRIDATION OF SILICON IN ACTIVE NITROGEN (THIN DIELECTRICS, PLASMA PROCESSING, VLSI MATERIALS, SILICON-NITRIDE, SILICON-OXYNITRIDE)

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