DESIGN STRUCTURE FOR INTEGRATING NONVOLATILE MEMORY CAPABILITY WITHIN SRAM DEVICES

摘要

A design structure embodied in a machine readable medium used in a design process includes a nonvolatile static random access memory (SRAM) device, including a pair of cross-coupled, complementary metal oxide semiconductor (CMOS) inverters configured as a storage cell for a bit of data; and a pair of magnetic spin transfer devices coupled to opposing sides of the storage cell; wherein the magnetic spin transfer devices are configured to retain the storage cell data therein following removal of power to the SRAM device, and are further configured to initialize the storage cell with the retained data upon application of power to the SRAM device.