Method For the Fabrication of GaAs/Si and Related Wafer Bonded Virtual Substrates

摘要

A method of making a virtual substrate includes providing a device substrate of a first material containing a device layer of a second material different from the first material located over a first side of the device substrate, implanting ions into the device substrate such that a damaged region is formed in the device substrate below the device layer, bonding the device layer to a handle substrate, and separating at least a portion of the device substrate from the device layer bonded to the handle substrate along the damaged region to form a virtual substrate comprising the device layer bonded to the handle substrate.