A METHOD FOR THE FABRICATION OF GaAs/Si AND RELATED WAFER BONDED VIRTUAL SUBSTRATES

摘要

A method of making a virtual substrate includes providing a device substrate (1) of a first material containing a device layer (2) of a second material different from the first material located over a first side of the device substrate, implanting ions (10) into the device substrate such that a damaged region (1b) is formed in the device substrate below the device layer, bonding the device layer to a handle substrate (4), and separating at least a portion of the device substrate from the device layer bonded to the handle substrate along the damaged region to form a virtual substrate comprising the device layer bonded to the handle substrate.