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Dielectric extension to mitigate short channel effects
Dielectric extension to mitigate short channel effects
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机译:介电扩展以减轻短沟道效应
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摘要
In patterning a transistor, some of a layer of gate dielectric material is allowed to remain over a semiconductor substrate upon which the transistor is formed. This remaining dielectric material retards the implantation of dopants into the underlying substrate, effectively lengthening a channel region of the transistor. This mitigates unwanted short channel effects, such as leakage currents, for example, and thus mitigates yield loss by establishing a transistor that performs in a more predictable or otherwise desirable manner.
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