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APPARATUS AND METHOD OF FORMING A MOSFET WITH ATOMIC LAYER DEPOSITED GATE DIELECTRIC
APPARATUS AND METHOD OF FORMING A MOSFET WITH ATOMIC LAYER DEPOSITED GATE DIELECTRIC
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机译:形成具有原子层沉积的栅极电介质的MOSFET的装置和方法
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摘要
A method for forming a metal oxide semiconductor field-effect transistor (MOSFET) (100) includes forming a III- V compound semiconductor on a substrate (106) with the IH-V compound semiconductor being doped with a first dopant type. The method further includes doping a first and second region of the III- V compound semiconductor with a second dopant type to form a drain (110) and a source (108) of the MOSFET (100). The method further includes forming a gate dielectric (103) on the HI-V compound semiconductor through atomic layer deposition. The method further includes applying a metal onto the dielectric (103) to form a gate (118) of the MOSFET. A MOSFET (100) is also disclosed herein.
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