首页>
外国专利>
APPARATUS AND METHOD OF FORMING METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH ATOMIC LAYER DEPOSITED GATE DIELECTRIC
APPARATUS AND METHOD OF FORMING METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH ATOMIC LAYER DEPOSITED GATE DIELECTRIC
展开▼
机译:用原子层沉积的栅极介电层形成金属氧化物半导体场效应晶体管的装置和方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for forming a metal oxide semiconductor field-effect transistor (MOSFET) includes forming a III-V compound semiconductor on a substrate with the III-V compound semiconductor being doped with a first dopant type. The method further includes doping a first and second region of the III-V compound semiconductor with a second dopant type to form a drain and a source of the MOSFET. The method further includes forming a gate dielectric on the III-V compound semiconductor through atomic layer deposition. The method further includes applying a metal onto the dielectric to form a gate of the MOSFET. A MOSFET is also disclosed herein.
展开▼