首页>
外国专利>
A WELL TO SUBSTRATE PHOTODIODE FOR USE IN A CMOS SENSOR ON A SALICIDE PROCESS
A WELL TO SUBSTRATE PHOTODIODE FOR USE IN A CMOS SENSOR ON A SALICIDE PROCESS
展开▼
机译:用于在硅化物工艺上的CMOS传感器中使用的可替换光电二极管的阱
展开▼
页面导航
摘要
著录项
相似文献
摘要
An image sensor having a well-to-substrate diode as the photodetector. In a preferred embodiment, a modern salicided (CMOS) process is utilized to manufacture the image sensor. The field oxide region above the diode junction is transparent to visible light, thus allowing the photodiode competitive quantum efficiency as compared to devices having source/drain diffusion-to-substrate photodiodes fabricated on a non-salicided process. The photodiode can be integrated as part of a sensor array with digital circuitry using a relatively unmodified digital CMOS process. Furthermore, the structure allows the optical properties of the photodiode to be engineered by modifying the well without deleterious effects, to approximate a first order, on the characteristics of a FET built in another identical well.
展开▼