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A STRAIN-COMPENSATED METASTABLE COMPOUND BASE HETEROJUNCTION BIPOLAR TRANSISTOR
A STRAIN-COMPENSATED METASTABLE COMPOUND BASE HETEROJUNCTION BIPOLAR TRANSISTOR
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机译:应变补偿的介稳复合基异质结双极晶体管
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摘要
A method for pseudomorphic growth and integration of an in-situ doped, strain-compensated metastable compound base (107) into an electronic device (100), such as, for example, a SiGe NPN HBT, by substitutional placement of strain-compensating atomic species. The invention also applies to strained layers in other electronic devices such as strained SiGe, Si in MOS applications, vertical thin film transistors (VTFT), and a variety of other electronic device types. Devices formed from compound semiconductors other than SiGe, such as, for example, GaAs, InP, and AlGaAs are also amenable to beneficial processes described herein.
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