The effect of Rapid Thermal Annealing (RTA) treatment on the base and collector currents of Si/Si1-xGex HBTs is investigated. Whilst the base current is improved by high temperature annealing, probably through annealing out of point defects (reducingE/B depletion region recombination), the collector current is degraded by the out-diffusion of boron from the base, creating parasitic barriers to injection. For some devices, the E/B depletion region recombination is reduced to such an extent that the base current is dominated by neutral base recombination.
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机译:研究了快速热退火(RTA)处理对Si / Si 1-x inf> Ge x inf> HBT基极和集电极电流的影响。尽管通过高温退火可以改善基极电流,可能是通过点缺陷以外的退火(降低E / B耗尽区的重组)来改善基极电流,但由于硼从基极向外扩散,集电极电流会降低,从而形成了注入的寄生势垒。对于某些器件,E / B耗尽区的重组降低到这样的程度,即基极电流被中性基极重组所支配。
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