BI-DIRECTIONAL RESISTIVE RANDOM ACCESS MEMORY INCLUDING SUB CELL ARRAY AND WRITING METHOD USING THEREOF

摘要

It is disclosed using identical RRAM and bi-directional data writing-method, including a subelement array. Wherein include across the predetermined number that the non-volatile memory device that the one or more that the data value of the unit according to an embodiment of the present invention determined by the pole of voltage includes at least memory cell array outputs and inputs line includes subelement array. Each subelement array and an individual X- decoder and driver. RRAM and identical bi-directional data write method advantage used according to the invention are: even if data values, carrying out write operation simultaneously in another case, by including subelement array, have an individual X- decoder and driver.