A forming method of pattern using ArF photolithography

摘要

PURPOSE: A method for forming a pattern using ArF exposure source is provided to be capable of minimizing the deformation of the pattern and narrowly forming the pattern. CONSTITUTION: An etch object layer(14) and an anti-reflective coating(15) are sequentially formed at the upper portion of a substrate(10) having a plurality of gate electrodes(11). A photoresist pattern(16) for ArF is formed on the anti-reflective coating by carrying out a photolithography using ArF exposure source. The surface of the etch object layer is partially exposed by selectively etching the anti-reflective coating, while conserving the first temperature condition. The etch object layer is selectively etched by using the remaining anti-reflective coating as a mask, while conserving the second temperature condition. At this time, the second temperature is relatively higher than the first temperature.