A forming method of pattern using ArF photolithography

摘要

The present invention relates to a semiconductor device manufacturing method, particularly for ArF without the addition of additional equipment or process intended to provide a pattern forming method using argon fluoride exposure source that can minimize the deformation of the photoresist pattern, the present invention to achieve this prey on the substrate, and forming each layer and in turn the anti-reflection layer; Applying a photoresist for argon fluoride on the antireflection layer; Forming a photoresist pattern by exposure and development processes using a predetermined mask; And the photoresist pattern as a mask O ₂ / N ₂ , CF ₄ / Ar / O ₂ , CH ₂ F ₂ / Ar / O ₂ or CHF ₃ / CF ₄ / Ar / O ₂ step while selectively etching the antireflection layer by using plasma exposure to the prey each layer surface to form a polymer which covers the side wall and the top surface of the photoresist pattern; And provides it to the mask the photoresist pattern including a polymer wherein the prey pattern forming method using argon fluoride exposure light source comprises the step of selectively etching the layers.