A forming method of pattern using ArF photolithography

摘要

PURPOSE: A method for forming a pattern using ArF exposure source is provided to be capable of minimizing the deformation of the pattern and improving the degree of integration due to the pattern narrowly formed. CONSTITUTION: An etch object layer(14) and an anti-reflective coating(15) are sequentially formed on a substrate(10) having a plurality of gate electrodes(11). A photoresist pattern for ArF is formed on the anti-reflective coating by carrying out a photolithography using ArF exposure source. The surface of the etch object layer is partially exposed by selectively etching the anti-reflective coating under chlorine based plasma atmosphere. The etch object layer is selectively etched by using fluorine based gas. At this time, the remaining anti-reflective coating is used as a mask.