METHOD FOR GROWING SINGLE CRYSTAL BY GERMANY OTF

摘要

1.method u0432u044bu0440u0430u0449u0438u0432u0430u043du0438u00a0 u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu043eu0432 u0433u0435u0440u043cu0430u043du0438u00a0 u043eu0442u0444 method, including the use of free, with equal inner diameter u0442u0438u0433u043bu00a0, u0442u0438u0433u043bu00a0 of material not in the u0437u0430u0438u043cu043eu0434u0435u0439u0441u0442u0432u0443u044eu0449u0435u0433u043e with u0440u0430u0441u043fu043bu0430u0432u043eu043c and steeped in the steel twin u043du0430u0433u0440u0435u0432u0430u0442u0435u043bu00a0 (u043eu0442u0444 heater)organized by u043fu0435u0440u0435u043cu0435u0449u0435u043du0438u00a0 u0442u0438u0433u043bu00a0 with u0437u0430u0442u0440u0430u0432u043au043eu0439 and growing crystal in cold zone in the furnace on the installation u043eu0442u0444 u043du0430u0433u0440u0435u0432u0430u0442u0435u043bu00a0, supp. u0435u0440u0436u0438u0432u0430u0435u043cu043eu0433u043e in u043fu043eu0441u0442u043eu00a0u043du043du043eu0439 temperature and u0438u0441u043fu043eu043bu044cu0437u0443u00a0 separate doping zones w1 and w2, u043eu0442u043bu0438u0447u0430u044eu0449u0435u0435u0441u00a0 what to u043fu043eu0432u044bu0448u0435u043du0438u00a0 macro and micro uniformity and percentage and the growth of crystals are u0433u0435u0440u043cu0430u043du0438u00a0 diameters up to 3 inches.the form of the crystallization are simultaneously u0434u0432u0443u0445u0441u0435u043au0446u0438u043eu043du043du044bu043c background u043eu0442u0444 heater and heater, and the temperature of the crystal u0432u044bu0442u00a0u0433u0438u0432u0430u043du0438u00a0 on the u0442u0438u0433u043bu00a0 t4 (t) u0443u043cu0435u043du044cu0448u0430u0435u0442u0441u00a0 in accordance with the law: t4 (t) = T40 - at, where u044240 primary temperature, a = v (pgradTp + q) / cd, v is the speed of u0432u044bu0442u00a0u0433u0438u0432u0430u043du0438u00a0 crystal, r - u0442u0435u043fu043bu043eu043fu0440u043eu0432u043eu0434u043du043e ism. melt u0433u0435u0440u043cu0430u043du0438u00a0,gradTp axis gradient of temperature in the u0440u0430u0441u043fu043bu0430u0432u0435 which u0445u043eu0442u00a0u0442 raise q of crystal, crystallization, crystal u0433u0435u0440u043cu0430u043du0438u00a0 cd with high thermal conductivity temperature, the value of h u043du0430u043au043bu0430u0434u044bu0432u0430u0435u0442u0441u00a0 condition 0,3D h , d is the diameter of the u043eu0442u0444 u043du0430u0433u0440u0435u0432u0430u0442u0435u043bu00a0, and the ratio of the initial concentrations in areas w1 and w2: c1 (u0434u043bu00a0 zone w1) and c2 (u0434u043bu00a0 z ona w1) u0443u0434u043eu0432u043bu0435u0442u0432u043eu0440u00a0u0435u0442 condition c1 = c2 / kwhere k is an equilibrium segregation coefficient u0434u043bu00a0 used u043bu0435u0433u0438u0440u0443u044eu0449u0435u0439 impurities.;2. method for u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 1, so that the growth of crystals u0433u0435u0440u043cu0430u043du0438u00a0 in u043au0440u0438u0441u0442u0430u043bu043bu043eu0433u0440u0430u0444u0438u0447u0435u0441u043au0438u0445 u043du0430u043fu0440u0430u0432u043bu0435u043du0438u00a0u0445 [111] and [100] having a diameter of 40 to 51 mm, alloy u0441u0443u0440u044cu043cu043eu0439 and u0433u0430u043bu043bu0438u0435u043c lead u0433u0440u0430u0444u0438u0442u043eu0432u043eu043c mould with u0441u043au043eu0440u043eu0441u0442u00a0u043cu0438 u0432u044bu0442u00a0u0433u0438u0432u0430u043du0438u00a0 in the range of 5 to 20 mm / hour with the thickness u0441u043bu043eu00a0 melt in the range of 8 to 15 mm.;3. method for u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 1, so that the growth of crystals u0433u0435u0440u043cu0430u043du0438u00a0 in u043au0440u0438u0441u0442u0430u043bu043bu043eu0433u0440u0430u0444u0438u0447u0435u0441u043au0438u0445 u043du0430u043fu0440u0430u0432u043bu0435u043du0438u00a0u0445 [111] and [100] of 52 to 76 mm alloy u0441u0443u0440u044cu043cu043eu0439 and u0433u0430u043bu043bu0438u0435u043c lead u0433u0440u0430u0444u0438u0442u043eu0432u043eu043c mould with u0441u043au043eu0440u043eu0441u0442u00a0u043cu0438 u0432u044bu0442u00a0u0433u0438u0432u0430u043du0438u00a0 in the range of 5 to 20 mm / hour with the thickness u0441u043bu043eu00a0 melt in the range of 10 to 20 mm.;4. method for u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 1, so that the growth of crystals u0433u0435u0440u043cu0430u043du0438u00a0 diameter 76 mm lead to temperature difference t2 - t1, 0 to 2c, and the difference between the temperatures t2, t3 is in a range of 2 to 10u0441.;5. method for u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 1, so that the growth of crystals u0433u0435u0440u043cu0430u043du0438u00a0 in u043au0440u0438u0441u0442u0430u043bu043bu043eu0433u0440u0430u0444u0438u0447u0435u0441u043au0438u0445 u043du0430u043fu0440u0430u0432u043bu0435u043du0438u00a0u0445 [111] and [100] diameter 76 mm alloy u0441u0443u0440u044cu043cu043eu0439 and u0433u0430u043bu043bu0438u0435u043c lead p ri temperature gradient in the u0440u0430u0441u043fu043bu0430u0432u0435 range gradTp = 5 - 35u0441 / cm.