METHOD growing single crystals GERMANY

摘要

method u0432u044bu0440u0430u0449u0438u0432u0430u043du0438u00a0 u043cu043eu043du043eu043au0440u0438u0441u0442u0430u043bu043bu043eu0432 u0433u0435u0440u043cu0430u043du0438u00a0 from melt to u0437u0430u0442u0440u0430u0432u043eu0447u043du044bu0439 crystal using u0444u043eu0440u043cu043eu043eu0431u0440u0430u0437u0443u044eu0449u0435u0433u043e element with u043eu0442u0432u0435u0440u0441u0442u0438u00a0 u0434u043bu00a0 u0443u0434u0430u043bu0435u043du0438u00a0 ilb. u0430u0437u0443u044eu0449u0435u0433u043eu0441u00a0 in excess u043eu0442u043bu0438u0447u0430u044eu0449u0438u0439u0441u00a0 melt crystallization, so that the cultivation of initially lead to u0432u0440u0430u0449u0430u044eu0449u0438u0439u0441u00a0 on u0437u0430u0442u0440u0430u0432u043eu0447u043du044bu0439 crystal, sl. love u043du0430u0445u043eu0434u0438u0442u0441u00a0 in u0444u043eu0440u043cu043eu043eu0431u0440u0430u0437u043eu0432u0430u0442u0435u043bu0435 (round or other shapes.the lateral shape of raised bars), u043fu043eu043cu0435u0449u0435u043du043du043eu043c in crucible without melt, u0444u043eu0440u043cu043eu043eu0431u0440u0430u0437u043eu0432u0430u0442u0435u043bu0435 in place u043fu0440u0438u043cu044bu043au0430u043du0438u00a0 lower u0444u043eu0440u043cu043eu043eu0431u0440u0430u0437u043eu0432u0430u0442u0435u043bu00a0 to t u0438u0433u043bu044e implemented u043eu0442u0432u0435u0440u0441u0442u0438u00a0, radius (r) which u0443u0434u043eu0432u043bu0435u0442u0432u043eu0440u00a0u0435u0442 condition (r k / h, where k = 0.2 cm - 2, h is the height of a melt (cm), and the number of holes u0441u043eu0441u0442u0430u0432u043bu00a0u0435u0442 12 - 18 grand, angular u0440u0430u0441u0441u0442 u043eu00a0u043du0438u00a0 between which are the same.