This first embodiment of a low thermal budget and its use

摘要

The low temperature epitaxy process on a surface of plate containing pure silicon material/silicon alloy in rapid thermal chemical vapor deposition equipment to reduce creeping by diffusion of surface of the plate, comprises charging the plate in an equipment at 400-500[deg]C, and preparing a surface to deposit new chemical species. The deposition is carried out at low epitaxial temperature of less than 750[deg]C. Temperature in the chemical deposition equipment increases the charging temperature of the plate up to depositing temperature without extending. The low temperature epitaxy process on a surface of plate containing pure silicon material/silicon alloy in rapid thermal chemical vapor deposition equipment to reduce creeping by diffusion of surface of the plate, comprises charging the plate in an equipment at 400-500[deg]C, and preparing a surface to deposit new chemical species. The deposition is carried out at low epitaxial temperature of less than 750[deg]C. Temperature in the chemical deposition equipment increases the charging temperature of the plate up to depositing temperature without extending. The preparation of plate surface comprises a permanent passivation surface, which is carried out by injecting gas/mixture of active gases at 400-500[deg]C, pre cleaning surface of the plate, and eliminating oxides by a treatment with hydrofluoric acid. The gas/mixture of active gases comprises a gas containing hydrochloric acid, and silane or dichlorosilane. Desorption takes place during increase in the temperature. The gas/mixture of active gases are introduced by surface passivation is different from the gas/mixture of gases are injected for deposition. The dichlorosilane acts as active gas and silane as deposition gas. Precursor of active gas is silicon and the precursor of deposition gas is silicon and germanium. The gas/mixture active gases for passivation have slower depository kinetics than the kinetics of gas/mixture of gases for the deposition. The mixture of active gases is adjusted by an adjustor to obtain depository kinetics, which is almost zero. The injection of gas/mixture of active gases is carried out after charging the plate.