首页> 外国专利> METHOD FOR PRODUCING GALLIUM HYDRIDE GAS AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL

METHOD FOR PRODUCING GALLIUM HYDRIDE GAS AND METHOD FOR PRODUCING GALLIUM NITRIDE CRYSTAL

机译:氢化镓气体的制备方法和氮化镓晶体的制备方法

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a gallium nitride crystal having a desired carrier concentration and fewer impurities without corroding a device for growing a crystal by accelerating a reaction of producing gallium hydride gas to contribute to improving a growth rate of the gallium nitride crystal and doping the gallium nitride crystal with oxygen as a n-dopant.;SOLUTION: Gallium hydride gas is generated by allowing gallium oxide 10 to react with hydrogen H2. The gallium hydride gas is made to react with a nitrogen-containing compound to grow a gallium nitride crystal. Oxygen derived from water molecules generating associated with generation of the gallium hydride gas is used as a n-dopant to dope the gallium nitride crystal in a process of growing the gallium nitride crystal.;COPYRIGHT: (C)2010,JPO&INPIT
机译:解决的问题:提供一种不加速制造氢化镓气体的反应,不助于提高镓的生长速度而制造具有期望的载流子浓度且杂质少的氮化镓晶体的方法,而不会腐蚀用于生长晶体的装置。氮化镓晶体,并用氧作为n掺杂剂掺杂氮化镓晶体。解决方案:通过使氧化镓10与氢气H2反应生成氢化镓气体。使氢化镓气体与含氮化合物反应以生长氮化镓晶体。在生长氮化镓晶体的过程中,从与氢化镓气体产生相关的水分子中产生的氧被用作n掺杂剂来掺杂氮化镓晶体。;版权所有:(C)2010,JPO&INPIT

著录项

  • 公开/公告号JP2009227480A

    专利类型

  • 公开/公告日2009-10-08

    原文格式PDF

  • 申请/专利权人 SUMITOMO SEIKA CHEM CO LTD;

    申请/专利号JP20080071813

  • 发明设计人 KITANO TSUKASA;MORIMOTO SHIGERU;

    申请日2008-03-19

  • 分类号C30B29/38;C30B25/02;H01L21/205;

  • 国家 JP

  • 入库时间 2022-08-21 19:43:10

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号