Method for producing a crystal growth method and the single crystal gallium nitride substrate of a single crystal gallium nitride substrate and the single-crystal gallium nitride

摘要

PROBLEM TO BE SOLVED: To overcome such difficulties that in the facet growth method for growing gallium nitride by forming and maintaining a facet, dislocation hazily extends from pit center parts comprising facet planes, thus radially developing plane defects and that since the positions where pits appear can not be controlled, a device can not be designed on the resulting single crystal.;SOLUTION: A stripe mask pattern is formed with regularity on a base substrate. On the pattern, straight V grooves (valleys) comprising facets are formed. While maintaining the V grooves (valleys), GaN is subjected to facet growth to form defects collection regions H at the V groove (valley) bottom parts comprising facet planes. Dislocation is collected at the region H to lower the dislocation in a low-defect single crystal region Z and a C-plane growth region around the region H. Because the region H is closed, the dislocation is confined and is not released again.;COPYRIGHT: (C)2003,JPO