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METHOD OF MANUFACTURING GROUP III-V COMPOUND SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FORMING GROUP III-V COMPOUND SEMICONDUCTOR
METHOD OF MANUFACTURING GROUP III-V COMPOUND SEMICONDUCTOR OPTICAL DEVICE, AND METHOD OF FORMING GROUP III-V COMPOUND SEMICONDUCTOR
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机译:制造III-V族化合物半导体光学器件的方法,以及形成III-V族化合物半导体的方法
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摘要
PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III-V compound semiconductor optical device, and a method of forming a group III-V compound semiconductor capable of improving photoluminescence characteristics.;SOLUTION: In this method, after manufacturing a quantum well structure 25, annealing 27 and the growth of a second conductivity group III-V compound semiconductor region 29 are executed using an organometallic vapor growth furnace 11. Since the annealing of the quantum well structure 25 and thermal cleaning prior to the growth of the second conductivity group III-V compound semiconductor region 29 are executed in the organometallic vapor growth furnace 11, a process is simplified. Also, after executing the annealing 27, a temperature of the organometallic vapor growth furnace 11 is lowered from an annealing temperature TTH to a growth temperature TGR of the second conductivity group III-V compound semiconductor region 29 in an H2 atmosphere. Thus, the diffusion of hydrogen to the quantum well structure 25 is suppressed, and the photoluminescence characteristics are improved.;COPYRIGHT: (C)2009,JPO&INPIT
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机译:解决的问题:提供一种制造III-V族化合物半导体光学器件的方法,以及一种形成能够改善光致发光特性的III-V族化合物半导体的方法。解决方案:在该方法中,制造量子之后阱结构25,退火27和第二导电性III-V族化合物半导体区域29的生长是使用有机金属气相生长炉11执行的。由于量子阱结构25的退火和第二生长之前的热清洗在有机金属蒸汽生长炉11中执行导电性III-V族化合物半导体区域29,从而简化了工艺。而且,在执行退火27之后,有机金属蒸气生长炉11的温度从退火温度T TH Sub>降低到第二导电性组的生长温度T GR Sub>。 H 2 Sub>气氛中的III-V化合物半导体区域29。因此,抑制了氢向量子阱结构25中的扩散,并且改善了光致发光特性。;版权所有:(C)2009,JPO&INPIT
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