...
首页> 外文期刊>Optoelectronics and Advanced Materials-Rapid Communications >Parameter extraction method of band parameters for III-V compound semiconductors using experimental data of transition energies
【24h】

Parameter extraction method of band parameters for III-V compound semiconductors using experimental data of transition energies

机译:利用跃迁能的实验数据提取III-V族化合物半导体的能带参数

获取原文
   

获取外文期刊封面封底 >>

       

摘要

BandparametersofgroupIII-VcompoundsemiconductorsGaAs,InAsandInParefitted.Becauseoftherandomdistributionofelementsfromthesamegroupwithinthealloylattice,exactcalculationsofmaterialparametersarehardlypossible.Thatiswhywetriedtofitparametersusingasmanyexperimentaldataaspossible.Emphasizingtheimportanceofbandstructurecalculation,directenergybandgap,Passlerrparameters,Luttingerparameters,deformationpotentials,energyparameterandcorrectionparameterarefitted,whicharethemostcontroversialinliterature.
机译:BandparametersofgroupIII-VcompoundsemiconductorsGaAs,InAsandInParefitted.Becauseoftherandomdistributionofelementsfromthesamegroupwithinthealloylattice,exactcalculationsofmaterialparametersarehardlypossible.Thatiswhywetriedtofitparametersusingasmanyexperimentaldataaspossible.Emphasizingtheimportanceofbandstructurecalculation,directenergybandgap,Passlerrparameters,Luttingerparameters,deformationpotentials,energyparameterandcorrectionparameterarefitted,whicharethemostcontroversialinliterature。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号