It possessed the tensile distortion, it was directed according to crystal orientation, the transistor which possesses the channel where electric charge carrier mobility increases

摘要

The transistor has a canal area (103) defining a channel longitudinal direction, where the canal area has a crystalline silicon material with a traction deformation component. The component is aligned along the direction, where the direction is essentially oriented along a crystallographic direction. The silicon material has a compressive deformation that acts along a channel width direction. Drain and source areas (107) are formed adjacent to a channel area, where the drain and the source areas have a deformed semiconductor material e.g. silicon/carbon material. An independent claim is also included for a method of manufacturing an electronic device.