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Magnet system, magnetron spatter device and magnetron spatter method for magnetron spatter

机译:磁控系统,磁控溅射装置及磁控溅射的磁控溅射方法

摘要

The magnet system for magnetron spatter of this invention when it is opposed to the target being the magnet system for portable possible magnetron spatter in abbreviation parallel direction vis-a-vis the suffering spatter aspect of the aforementioned target, in abbreviation vertical direction extending being present and N extremely or inside the S pole is opposed in the aforementioned target, alienating from the magnet and the magnet inside the description above vis-a-vis the direction of the aforementioned movement, surrounds the magnet inside the description above, outside the pole of opposite to the magnet inside the description above is opposed in the aforementioned target, is provided the magnet and with of the magnet inside the description above and the magnet, outside the description above keeping the magnet inside the description above and the magnet outside the description aboveIt features that reversal possibly it is provided the nonmagnetic component which it does and, it has, the pole which opposes to the aforementioned target the magnet inside the description above and the magnet outside the description above in respectively. Controlling the variation of the electron density in the edge of the target, it can assure the equalization of plasma density of the part of that. Because of this, equalization of the spatter rate in the target edge assures, can control the variation of membrane distribution to membrane object ones. In addition, making also the variation of the target erosion small, utilization efficiency of the target it can improve.
机译:当本发明的用于磁控管溅射的磁体系统与目标相对时,是用于便携式可能的磁控管溅射的磁体系统,在缩写平行方向上相对于上述目标的受难飞溅的方面,在缩写垂直方向上存在N极或在S极内部与上述目标相对,与上述运动方向上的磁铁和上述描述内部的磁铁不同,在上述极内部或外部围绕磁铁包围在上述描述的内部。与上述磁体内部相反的磁体在上述目标中是相反的,设置有磁体并且磁体在磁体内部以及磁体在磁体外部,磁体在磁体外部并且磁体在磁体外部并且磁体在磁体内部并且磁体在磁体内部并且磁体在磁体内部并且磁体在磁体内部。可能会反转的特征提供了它所做的非磁性成分,并且s,与上述目标相对的磁极分别是上述说明内的磁体和上述说明外的磁体。控制靶边缘电子密度的变化,可以确保部分等离子体密度的均等化。因此,确保目标边缘处的飞溅率均等,可以控制膜向对象物体的分布的变化。另外,还使靶材侵蚀的变化较小,可以提高靶材的利用效率。

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