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The plasma the gate dielectric which is nitrided with 2 gradual system after the nitriding annealing the production method in order to do of being improved
The plasma the gate dielectric which is nitrided with 2 gradual system after the nitriding annealing the production method in order to do of being improved
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机译:氮化退火后等离子的逐步氮化制的栅极电介质的生产方法有所改进。
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摘要
A method of forming a silicon oxynitride gate dielectric. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed in a first ambient. The first ambient comprises an inert ambient with a first partial pressure of oxygen at a first temperature. The silicon oxynitride film is then annealed in a second ambient comprising a second partial pressure of oxygen at a second temperature. The second partial pressure of oxygen is greater than the first partial pressure of oxygen.
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