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IMPROVED MANUFACTURING METHOD FOR TWO-STEP POST NITRIDATION ANNEALING OF PLASMA NITRIDED GATE DIELECTRIC
IMPROVED MANUFACTURING METHOD FOR TWO-STEP POST NITRIDATION ANNEALING OF PLASMA NITRIDED GATE DIELECTRIC
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机译:等离子体渗氮门电介质两步后氮化的改进制造方法
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摘要
A method of forming a silicon oxynitride gate dielectric. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed in a first ambient. The first ambient comprises an inert ambient with a first partial pressure of oxygen at a first temperature. The silicon oxynitride film is then annealed in a second ambient comprising a second partial pressure of oxygen at a second temperature. The second partial pressure of oxygen is greater than the first partial pressure of oxygen.
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