After doing production manner of the semiconductor device, and the semiconductor formation which

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a semiconductor manufacturing apparatus which can control the substrate surface temperature during an etching treatment, until immediately after etching or completion of an etching process.;SOLUTION: A method of manufacturing a semiconductor device, which has a process for cleaning a substrate or a semiconductor layer epitaxially grown on a substrate after patterning thereon by a wet etching process, includes the steps of preparing a semiconductor substrate having a first temperature; setting the semiconductor substrate maintained at the first temperature at a second temperature; etching the semiconductor substrate maintained at the second temperature, by etching liquid having a third temperature; and cleaning the semiconductor substrate, on which the etching liquid maintained at the third temperature remains, by ultra-pure water having a fourth temperature, wherein the second temperature is maintained at the range between the first and the third temperatures.;COPYRIGHT: (C)2009,JPO&INPIT