The PLZT or PZT ferroelectric thin film, the constituent and formation manner null for that formation

摘要

PROBLEM TO BE SOLVED: To lower a crystallization temperature of a PLZT(Pb, La, Zr, Ti) ferroelectric thin film. SOLUTION: Concerning a ferroelectric-thin-film forming composition that is made of an organic metal compound solution for forming a PLZT ferroelectric thin film, a liquid composition is prepared to form a thin film of a blended composite metal oxide consisting of a composite metal compound A that is expressed by the formula: (Pbx Lay )(Zrz Ti1-z )O3 (wherein 0.9x1.3, 0=y0.1, 00.9); and a composite metal oxide B that is composed of one kind or two/more kinds of elements selected from Bi, Si, Pb, Ge, Sn, Al, Ga, In, Mg, Ca, Sr, Ba, V, Nb, Ta, Sc, Y, Ti, Zr, Hf, Cr, Mn, Fe, Co, Ni, Zn, Cd, Li, Na, and K. This liquid composition is used to form a film by a chemical- solution-deposition(CSD) method such as a sol-gel method, and thus a ferroelectric thin film fired at a low temperature of about 400 deg.C can be obtained.